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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD868
DESCRIPTION *With TO-3 package *Built-in damper diode *High voltage ,high speed *Low collector saturation voltage APPLICATIONS *For use in color TV deflection circuits
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-base voltage Collector-collector voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE 1500 600 5 2.5 1.0 50 150 -65~150
UNIT V V V A A W
PT Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rjc CHARACTERISTICS Thermal resistance junction to case MAX 2.5 UNIT /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE VF fT COB tf PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage Transition frequency Collector output capacitance Fall time CONDITIONS IE=200m A;IC=0 IC=2 A;IB=0.6 A
B
2SD868
MIN 5
TYP.
MAX
UNIT V
8.0 1.5 10 8 2.0 3 100 1.0
V V A
IC=2 A;IB=0.6 A
B
VCB=500V;IE=0 IC=0.5A ; VCE=5V IF=2.5A IC=0.1A ; VCE=10V; f=1MHz IE=0 ; VCB=10V;f=1MHz IC=2A;IB1end=0.6A
V MHz pF s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD868
Fig.2 Outline dimensions
3


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